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| PRELIMINARY STX7905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: * * * * * * BVCBO 600V. Fast Switching. Low Leakage. Low Saturation Voltage. 200oC Operating, Gold Eutectic Die Attach. Designed for Complementary Use with STX6905. 1 AMP 600 VOLTS NPN TRANSISTOR TO-59 MAXIMUM RATINGS Collector-Emitter Voltage RBE = 1 kOhms Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dessipation @ TC = 25oC Derate above 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-59 Pin Out: 1 - Collector 2 - Base 3 - Emmiter SYMBOL VCEO VCER VCBO VEBO IC IB PD TJ, TSTG R1JC VALUE 450 600 600 6 1 0.5 20 133 -65 to +200 7.5 UNITS Volts Volts Volts Amps Amps Watts mW/ oC o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0006A PRELIMINARY STX7905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage* ( IC = 1 mADC) (IC = 100:ADC; RBE = 1kS) Collector-Base Breakdown Voltage (IC = 100uADC) Emitter-Base Breakdown Voltage (IE = 20uADC) Collector Cutoff Current (VCB = 600VDC) Emmiter Cutoff Current (VEB = 6VDC) DC Current Gain* (IC = 1mADC; VCE = 10VDC) (IC = 25mADC; VCE = 10VDC) (IC = 100mADC; VCE = 15VDC) SYMBOL BVCEO BVCER BVCBO BVEBO ICBO IEBO MIN 450 600 600 6 40 40 30 25 - MAX 1 1 200 200 0.5 1.0 15 UNITS VDC V V :A :A HFE Collector-Emitter Saturation Voltage* (IC = 25mADC, IB = 2.5mADC) Base-Emitter Saturation Voltage* (IC = 25mADC, IB = 2.5mADC) Current Gain Bandwidth Product (IC = 50mADC , VCE = 10VDC, f = 1MHz) Output Capacitance (VCB= 30VDC , IE = 0ADC, f = 1.0MHz) *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% VCE(SAT) VBE(SAT) fT Cob VDC VDC MHz pf |
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